| 摘要 |
<p>An ion implantation apparatus which helps to improve productivity and an ion implantation method are provided. The ion implantation apparatus (10) comprises an ion source (18) having a withdrawal electrode system (24) for withdrawing a ribbon beam (12) and a process chamber (26) for receiving the ribbon beam (12) from the ion source (18). The process chamber (26) is configured to pass an ion beam irradiation region (14) through a substrate (S). The ribbon beam (12) is determined according to ion beam generation conditions of the ion source (18). The ribbon beam (12) maintains beam characteristics from the withdrawal electrode system (24) to the ion beam irradiation region (14) while the ion beam irradiation region (14) passes through the substrate (S) to directly irradiate the ion beam irradiation region (14) to the moving substrate (S).</p> |
