| 摘要 |
PURPOSE: A method of etching a wafer using a plasma etching apparatus is provided to perform a bevel etching of a wafer in low temperature by using a physical etching gas. CONSTITUTION: In a device, a central zone of wafer is settled on a wafer stage within a chamber and a wafer bevel is exposed to the outside(S110). An interval between a shielding area and a wafer are controlled after controlling a temperature of the chamber and transferring the wafer stage(S120). A physical etching gas is supplied to a bevel region of the wafer and the wafer bevel region is physically etched(S130). A residual gas is exhausted after the etching process(S140). At least one of a chamber and the wafer has a room temperature or 100°C. |
