发明名称 DRY ETCH PROCESS
摘要 A method for conformal dry etch of a liner material in a high aspect ratio trench is achieved by depositing or forming an inhomogeneous passivation layer which is thicker near the opening of a trench bat thinner deep within the trench. The methods described herein use a selective etch following formation of the inhomogeneous passivation layer. The selective etch etches liner material faster than the passivation material. The inhomogeneous passivation layer suppresses the etch rate of the selective etch near the top of the trench (where it would otherwise be fastest) and gives the etch a head start deeper in the trench (where it would otherwise be slowest). This method may also find utility in removing bulk material uniformly from within a trench.
申请公布号 US2014134842(A1) 申请公布日期 2014.05.15
申请号 US201313832802 申请日期 2013.03.15
申请人 APPLIED MATERIALS, INC. 发明人 ZHANG JINGCHUN;INGLE NITIN K.;WANG ANCHUAN
分类号 H01L21/311 主分类号 H01L21/311
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