METHOD FOR CRYSTALLIZING A SILICON SUBSTRATE

摘要

A method for crystallizing a silicon substrate according to an embodiment of the present invention includes a crystallized silicon substrate processing stage where a silicon substrate is crystallized by a linear scanning of the excimer laser annealing (ELA) with a different energy density applied on the surface of each tested substrate made of an amorphous silicon set off by multiple areas; a reflectivity measuring stage which lightens the surface of the tested silicon substrates crystallized based on a light source within the visible light wavelength and measures reflectivity corresponding with each area of the tested substrates within the scope of the visible light wavelengths; a color-specific average reflectivity extracting stage which extracts an average reflectivity from all areas of the tested substrates within the scope of multiple wavelengths per color; an optimum energy density index (OPED INDEX) calculation stage which calculates an OPED INDEX per energy density by the value of a difference between an average reflectivity generated from the blue-like colors and an average reflectivity generated from the red-like colors out of the color-specific average reflectivities; and an optimum energy density selection stage which selects an optimum energy density by comparing an OPED INDEX per each energy density calculated.