IN-GA-ZN BASED OXIDE SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME

摘要

The present invention relates to a sputtering target of indium-gallium-zinc oxide and a method for producing the same, which includes firstly pulverizing indium oxide (In_2O_3), gallium oxide (Ga_2O_3), and zinc oxide (ZnO) powder; calcinating the firstly pulverized powder at the temperature of 1000°C or lower and secondly pulverizing the calcination-processed powder; and spherizing and sieving the secondly pulverized powder and filling the spherized and sieved powder in a mold for compress molding and sintering. The mole ratio composition of indium oxide, gallium oxide and the zinc oxide satisfies 0.5 <= ZnO / (In_2O_3 + Ga_2O_3 + ZnO) <= 0.95.