发明名称 METHOD OF PATTERNING A LOW-K DIELECTRIC FILM
摘要 Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
申请公布号 US2014120726(A1) 申请公布日期 2014.05.01
申请号 US201314059996 申请日期 2013.10.22
申请人 NEMANI SRINIVAS D.;PENDER JEREMIAH T.;ZHOU QINGJUN;LUBOMIRSKY DMITRY;BELOSTOTSKIY SERGEY G. 发明人 NEMANI SRINIVAS D.;PENDER JEREMIAH T.;ZHOU QINGJUN;LUBOMIRSKY DMITRY;BELOSTOTSKIY SERGEY G.
分类号 H01L21/308;H01L21/02;H01L21/3065 主分类号 H01L21/308
代理机构 代理人
主权项
地址