| 摘要 |
Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion regions in a semiconductor, the one or more diffusion regions being adjacent to a gate formed adjacent to a surface of the semiconductor (e.g., a semiconductor substrate). The one or more diffusion regions comprise a first width at a depth below the surface of the semiconductor and a second width near the surface of the semiconductor, the second width of the one or more diffusion regions being less than about 40% greater than the first width. |
