| 摘要 |
A method of making a sputtering target includes providing a backing structure, and forming a copper indium gallium sputtering target material on the backing structure by cold spraying. The step of cold spraying includes spraying a powder comprising copper, indium and gallium in a process gas stream, and at least one of an average particle size of the powder is at least 35μm, a velocity of the process gas stream is at least 150 m/s, or a process gas pressure is 20 bar or less. |
