| 摘要 |
975,827. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. March 24, 1961 [March 24, 1960], No. 10959/61. Heading H1K. A semi-conductor device has two electrodes alloyed to opposing surfaces of a semi-conductor body 1, the electrodes being attached to two terminal members which are in turn attached to the inner surface of a hollow insulating body to form a space enclosing the device. The length of the electrical surface leakage path is arbitrarily determined by choice of the dimensions of the insulating body. In one embodiment alloyed electrodes 2, 3 are alloyed or soldered to tungsten, molybdenum or tantalum blocks 4, 5 and a ceramic cylinder 8 is soldered to the latter using a solder containing titanium or zirconium, or by premetallizing the ceramic surface. The resulting enclosure is preferably gas-tight. In another arrangement (Fig. 2, not shown), a small block of tungsten is soldered to each of the alloyed electrodes, a flexible molybdenum disc is soldered to each tungsten block, and a copper block is soldered to each disc, the periphery of each disc being attached to the insulating cylinder to act as a diaphragm. If a P-N junction in the semi-conductor body intersects the outer periphery of the body (Fig. 3), the periphery may be bevelled to prevent both sides of the junction touching the insulating tube. The cylinder may be stepped so as to partially project over the edges of the terminal blocks. The soldering and electrode alloying operations may be carried out in a single step. A plurality of devices may be clamped between bus-bars to form a high-power rectifying circuit (Figs. 4 to 7, not shown), each terminal being first clamped to a finned cooling block, or itself being provided with fins. If desired, a fuse may be connected in series with each device. |
