| 摘要 |
Methods for forming a thin film layer on a substrate are provided. The method can include: rotating a cylindrical target about a center axis; ejecting atoms from the sputtering surface with a plasma; transporting a substrate across the plasma at a substantially consistent speed; and depositing the atoms ejected from the sputtering surface onto the substrate to form a thin film layer. The cylindrical target generally includes a source material forming a sputtering surface about the cylindrical target, with the source material having a plurality of first areas and a plurality of second areas. Each first area includes a first compound, and each second area includes a second compound, while the first compound is different than the second compound. |
