| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor layer analyzing method and a nitride semiconductor substrate manufacturing method using the same, which can analyze a mixed crystal ratio in a ternary nitride semiconductor layer even when a surface of the nitride semiconductor layer is covered with a cap layer in a non-destructive manner and simply with high accuracy.SOLUTION: A nitride semiconductor layer analyzing method comprises: obtaining a reflection spectrum of an ABN layer (A, B are group-13 elements, N is a nitride element, 0≤x≤1) by using reflection spectroscopy on a nitride semiconductor layer in which an AN layer or a BN layer with a thickness of 0.5-10 nm is laminated on the ABN layer; and calculating x from a formula E=(1-x)E+xE-bx(1-x) (b is a bending constant against A, B) when assuming that at a peak position of the reflection spectrum is a bandgap energy value E, a bandgap energy value of ABN (x=1) is Eand a bandgap energy value of ABN (x=0) is E. |
