METHOD FOR PLANARIZING SURFACE OF GERMANIUM LAYER, AND SEMICONDUCTOR STRUCTURE AND PROCESS FOR PRODUCING SAME

摘要

A method for planarizing a surface of a germanium layer, the method including a step in which the surface of a germanium layer is heat-treated in a reducing-gas or inert-gas atmosphere at a temperature of 400-850ºC. Also provided is a process for producing a semiconductor structure, the process comprising a step in which a surface of a germanium layer is heat-treated in a reducing-gas or inert-gas atmosphere at a temperature of 400-850ºC and a step in which a germanium oxide film is formed on the heat-treated surface of the germanium layer. Furthermore provided is a semiconductor structure equipped with a germanium layer, the surface of which has an RMS for a 1 µm × 1 µm area of 0.2 nm or less.