发明名称 |
METHOD OF DEPOSITING ALUMINUM OXIDE |
摘要 |
PROBLEM TO BE SOLVED: To provide a technique for enhancing the deposition rate of aluminum oxide by sputtering.SOLUTION: A method of depositing aluminum oxide includes a first plasma generation step for generating plasma in a vacuum container into which sputter gas and reactive gas are introduced, and a second plasma generation step for generating magnetron plasma by a magnetostatic field, by applying a sputter voltage of negative voltage to an aluminum target. The first plasma generation step is a step for generating high frequency induction coupling plasma during at least the second plasma generation step, by using a high frequency antenna consisting of a conductor provided in a vacuum vessel and having a number of turns less than one lap. |
申请公布号 |
JP2014057034(A) |
申请公布日期 |
2014.03.27 |
申请号 |
JP20120215609 |
申请日期 |
2012.09.28 |
申请人 |
DAINIPPON SCREEN MFG CO LTD |
发明人 |
OZAKI KAZUTO;MAEOKA JUNJI |
分类号 |
H01L21/316;C23C14/08;C23C14/34 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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