发明名称 METHOD OF DEPOSITING ALUMINUM OXIDE
摘要 PROBLEM TO BE SOLVED: To provide a technique for enhancing the deposition rate of aluminum oxide by sputtering.SOLUTION: A method of depositing aluminum oxide includes a first plasma generation step for generating plasma in a vacuum container into which sputter gas and reactive gas are introduced, and a second plasma generation step for generating magnetron plasma by a magnetostatic field, by applying a sputter voltage of negative voltage to an aluminum target. The first plasma generation step is a step for generating high frequency induction coupling plasma during at least the second plasma generation step, by using a high frequency antenna consisting of a conductor provided in a vacuum vessel and having a number of turns less than one lap.
申请公布号 JP2014057034(A) 申请公布日期 2014.03.27
申请号 JP20120215609 申请日期 2012.09.28
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 OZAKI KAZUTO;MAEOKA JUNJI
分类号 H01L21/316;C23C14/08;C23C14/34 主分类号 H01L21/316
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