| 摘要 |
Disclosed is a method for manufacturing a silicon structural body, which includes: a first step wherein trench-etching is performed with respect to silicon using plasma formed by introducing an etching gas and an organic deposition forming gas alternately or in a mixed state; a second step wherein the silicon structural body formed in the first step is exposed to plasma formed by introducing the organic deposition forming gas; a third step wherein the silicon on the bottom surface of a trench-etched portion of the silicon structural body formed in the second step is exposed; a fourth step wherein the silicon structural body formed in the third step is exposed to a xenon difluoride gas; and a fifth step wherein the silicon structural body formed in the fourth step is heated at 50-500°C under the oxygen-containing gas atmosphere. |
