| 摘要 |
PROBLEM TO BE SOLVED: To suppress generation of cracks in a passivation film due to thermal stress of an organic coating film.SOLUTION: A semiconductor device 10 disclosed in the present specification includes a semiconductor substrate 12, an insulating film 58, a first passivation film 76, a second passivation film 70, a stress relaxation layer 72, an organic coating film 80, and a resin layer 82. The insulating film 58 is disposed above the semiconductor substrate 12. The first passivation film 76 is disposed above the insulating film 58. The second passivation film 70 is disposed above the first passivation film 76. The stress relaxation layer 72 is disposed above the second passivation film 70. The organic coating film 80 is disposed above the stress relaxation layer 72. The resin layer 82 is disposed above the organic coating film 80. The Young's modulus of the stress relaxation layer 72 is smaller than that of the organic coating film 80 and that of the second passivation film 70. |
