DEFECT FREE STRAINED SILICON ON INSULATOR (SSOI) SUBSTRATES

摘要

A method of forming a strained semiconductor material that in one embodiment includes forming a cleave layer in a host semiconductor substrate, and contacting a strain inducing material layer on a surface of a transfer portion of the host semiconductor substrate. A handle substrate is then contacted to an exposed surface of the stress inducing material layer. The transfer portion of the host semiconductor substrate may then be separated from the host semiconductor substrate along the cleave layer. A dielectric layer is formed directly on the transfer portion of the host semiconductor substrate. The handle substrate and the stress inducing material are then removed, wherein the transferred portion of the host semiconductor substrate provides a strained semiconductor layer that is in direct contact with a dielectric layer.