发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method for manufacturing a semiconductor device includes the step of polishing a conductive film formed over a semiconductor substrate. The conductive film is formed by a barrier film that is in contact with second and third interlayer insulating films, and a copper film that is in contact with the barrier film. A polishing surface of a second polishing pad for polishing and removing the barrier film and the third interlayer insulating film has a lower pore area ratio than a polishing surface of a first polishing pad for polishing and removing the copper film. |
申请公布号 |
US8668553(B2) |
申请公布日期 |
2014.03.11 |
申请号 |
US201113038821 |
申请日期 |
2011.03.02 |
申请人 |
KOROGI HAYATO;PANASONIC CORPORATION |
发明人 |
KOROGI HAYATO |
分类号 |
B24B1/00;B24B37/24;H01L21/304 |
主分类号 |
B24B1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|