| 摘要 |
According to one aspect of the present disclosure of a semiconductor ultraviolet ray-emitting diode, the semiconductor ultraviolet ray-emitting diode comprises: a metal reflective film, which electrically comes into contact with a second semiconductor layer from the opposite side of a first semiconductor layer, with an active layer at the center, for reflecting light which is generated form the active layer toward the first semiconductor layer, and which comprises Al as a light reflecting material; and a structure containing oxygen, which is positioned between the second semiconductor layer and the metal reflective film and is provided with a light-transmitting conductive oxide film having a thickness of less than or equal to 5nm. |
