| 摘要 |
The purpose of this technique is to prevent data on memory cells from being deteriorated by word line disturbance. A memory according to the present invention comprises: a first bank including first to N word lines, and first to M redundancy word lines to replace M word lines among the first to N word lines; a second bank including first to N word lines, and first to M redundancy word lines to replace M word lines among the first to N word lines; and a control unit for activating at least one adjacent word line adjacent to a K^th (1<=K<=M) redundancy word line of a selected bank, in response to an active signal of the selected bank, when a word line corresponding to an input address among the first to N word lines is replaced with the K^th redundancy word line among the first to M redundancy word lines in the bank selected by bank selection information out of the first and second banks in a first mode. [Reference numerals] (420) Memory controller |
