| 摘要 |
PROBLEM TO BE SOLVED: To form a desired phase separation pattern regardless of density variation of a guide pattern of a physical guide.SOLUTION: In a pattern formation method according to the present embodiment, a first predetermined pattern is included in a first region on a processed film, and a physical guide including a second predetermined pattern is formed in a second region. Block polymer is formed in the physical guide, and is microphase-separated, so as to form a self-organization phase having a first polymer part and a second polymer part. While the first polymer is left, the second polymer part is removed. After removing the second polymer part, the processed film is processed with the physical guide and the first polymer part as masks. Height of the first predetermined pattern is higher than that of the second predetermined pattern. |
