| 摘要 |
A semiconductor memory device includes: a memory array including first memory cells for data storage and second memory cells for storing information of fast cells which have a threshold voltage increasing more rapidly than normal cells; and adjacent circuits which execute the main program loop including the main program command and the main program verification operation command in the first cells, and execute the main program loop in order to get the threshold voltage of the fast cells larger than that of normal cells based on the information of the fast cells while executing the main program verification operation command. [Reference numerals] (310) Check fast cell information; (322) Conduct a pre-program operation; (324) Generate a memory cell which is Vt >= Vpv1?; (332) Conduct a main program operation; (334) Conduct a verification operation of a normal cell based on Vpv1, Conduct a verification operation of a fast cell based on Vpv2(竊�pv1); (336) All normal cells Vt >= Vpv1, All fast cells Vt >= Vpv2?; (AA) Start; (BB,DD) No; (CC,EE) Yes; (FF) End |
