发明名称 |
Magnetorsistance effect element |
摘要 |
A magnetoresistance effect element includes a non-magnetic substrate, a ferromagnetic dispersion layer or a ferromagnetic layer, and a non-magnetic metal film. The ferromagnetic dispersion layer is a layer of a ferromagnetic metal or alloy that is independently and dispersedly formed on the substrate. The alternative ferromagnetic layer is a layer of a ferromagnetic metal or alloy that is formed on the substrate with a textured surface. The non-magnetic metal film is made of at least one atomic element having a non-soluble relation with the ferromagnetic metal or alloy, and is formed on the non-magnetic substrate and the ferromagnetic dispersion layer or the ferromagnetic layer.
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申请公布号 |
US5585198(A) |
申请公布日期 |
1996.12.17 |
申请号 |
US19940326731 |
申请日期 |
1994.10.20 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
MAEDA, ATSUSHI;OIKAWA, SATORU;KUME, MINORU |
分类号 |
G01R33/09;G11B5/39;H01F10/00;H01L43/10;(IPC1-7):B32B3/10;B32B15/00;G11B21/00 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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