发明名称 Magnetorsistance effect element
摘要 A magnetoresistance effect element includes a non-magnetic substrate, a ferromagnetic dispersion layer or a ferromagnetic layer, and a non-magnetic metal film. The ferromagnetic dispersion layer is a layer of a ferromagnetic metal or alloy that is independently and dispersedly formed on the substrate. The alternative ferromagnetic layer is a layer of a ferromagnetic metal or alloy that is formed on the substrate with a textured surface. The non-magnetic metal film is made of at least one atomic element having a non-soluble relation with the ferromagnetic metal or alloy, and is formed on the non-magnetic substrate and the ferromagnetic dispersion layer or the ferromagnetic layer.
申请公布号 US5585198(A) 申请公布日期 1996.12.17
申请号 US19940326731 申请日期 1994.10.20
申请人 SANYO ELECTRIC CO., LTD. 发明人 MAEDA, ATSUSHI;OIKAWA, SATORU;KUME, MINORU
分类号 G01R33/09;G11B5/39;H01F10/00;H01L43/10;(IPC1-7):B32B3/10;B32B15/00;G11B21/00 主分类号 G01R33/09
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