METHOD AND SYSTEM FOR EDGE TERMINATION IN GAN MATERIALS BY SELECTIVE AREA IMPLANTATION DOPING

摘要

A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing an n-type GaN substrate having a first surface and a second surface, forming an n-type GaN epitaxial layer coupled to the first surface of the n-type GaN substrate, and forming one or more p-type regions in the n-type GaN epitaxial layer by using a first ion implantation. At least one of the one or more p-type regions includes an edge termination structure.