发明名称 |
METHODS OF MANUFACTURING INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR AND INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR MANUFACTURED BY THE METHODS |
摘要 |
<p>Disclosed is a method of manufacturing an indium zinc oxide semiconductor thin film transistor. A gate electrode and a gate insulating layer are formed on a substrate. A semiconductor active layer is formed by spaying a precursor solution including an indium precursor, a first zinc precursor containing no chlorine, and a second zinc precursor containing chlorine to the upper part of the gate insulating layer. A source electrode and a drain electrode are formed in the upper part of the semiconductor active layer. Therefore, the indium zinc oxide semiconductor thin film transistor can be manufactured. [Reference numerals] (AA) Start; (BB) End; (S110) Step of forming a gate electrode on a substrate; (S120) Step of forming a gate insulating layer to cover the gate electrode on the substrate; (S130) Step of forming a semiconductor active layer by spaying a precursor solution including an indium precursor, a first zinc precursor containing no chlorine, and a second zinc precursor containing chlorine to the upper part of the gate insulating layer; (S140) Step of forming a source electrode and a drain electrode in the upper part of the semiconductor active layer</p> |
申请公布号 |
KR101365800(B1) |
申请公布日期 |
2014.02.20 |
申请号 |
KR20130031303 |
申请日期 |
2013.03.25 |
申请人 |
PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION |
发明人 |
YI, MOON SUK;LEE, DONG HEE |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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