| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning agent used in a cleaning process after a flattening/polishing process in a semiconductor device manufacturing process, and capable of rapidly removing, without causing corrosion of copper wiring, organic substance contamination and particle contamination present on a surface of a semiconductor device, in particular, a surface of a semiconductor device with the copper wiring formed on the surface, and highly cleaning a surface of a substrate; and a cleaning method using the cleaning agent. SOLUTION: This cleaning agent is used after a chemical mechanical polishing process of a semiconductor device having the copper wiring on a surface in a semiconductor device manufacturing process, and contains a polycarboxylic compound represented by formula (1): HOOC-R<SB>1</SB>-C(R<SB>2</SB>)=C(R<SB>3</SB>)COOH (R<SB>1</SB>is a single bond or an alkylene group, R<SB>2</SB>and R<SB>3</SB>are each independently a hydrogen atom or an organic group, and -R<SB>1</SB>COOH group and -COOH group each have an arrangement of cis for a double bond), a chelating agent and an anionic surface-active agent. COPYRIGHT: (C)2010,JPO&INPIT |
