| 摘要 |
A method of plasma chemical etching polysilicon includes manufacturing operations of forming photocopies: chemical processing substrates in vapors of hexamethyldisilazane, applying photoresist films, drying and exposure thereof, development of exposed areas, hardening the photoresist film of plasma chemical etching. The etching process is performed in a mixture of gases, which comprises: etching gas SF, halogen-containing gas, which can form a film on the side surface of polysilicon, and gas capable of reacting with polysilicon surface, changing its properties with forming of oxide or oxynitride, or silicon carbide, and substrate temperature of ÷ +. |
