METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method of producing a silicon carbide single crystal that may suppress the formation of micropipes.SOLUTION: A growth chamber 10 having an inner wall EW is provided. The inner wall EW has a raw material support part E1, a seed crystal support part E2 and a sacrificial part E3. The growth chamber 10 is heated so that the temperature of the raw material support part E1 is Twhich is higher than the sublimation temperature of silicon carbide, the temperature of the seed crystal support part E2 is Tand the temperature of the sacrificial part E3 is T. The relationship T>T≥Tis satisfied. A silicon carbide single crystal 81 having a mass of Wis formed on the seed crystal 70 and a silicon carbide deposit 82 having a mass of Wis deposited on the sacrificial part E3. The relationship W/W<5 is satisfied.