| 摘要 |
<p>There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer having a first surface energy; treating the first layer with a priming material to form a priming layer; exposing the priming layer patternwise with radiation resulting in exposed areas and unexposed areas; developing the priming layer to effectively remove the priming layer from the unexposed areas resulting in a first layer having a pattern of priming layer, wherein the pattern of priming layer has a second surface energy that is higher than the first surface energy; and forming the second layer by liquid depositions on the pattern of priming layer on the first layer. The priming material has Formula I In Formula I: Ar1 through Ar4 are the same or different and are aryl groups; L is a spiro group, an adamantyl group, bicyclic cyclohexyl, deuterated analogs thereof, or substituted derivatives thereof; R1 is the same or different at each occurrence and is D, F, alkyl, aryl, alkoxy, silyl, or a crosslinkable group, where adjacent R1 groups can be joined together to form an aromatic ring; R2 is the same or different at each occurrence and is H, D, or halogen; a is the same or different at each occurrence and in an integer from 0-4; and n is an integer greater than 0.</p> |
