发明名称 Startsubstrat för halvledarteknologi med substratgenomgåendekopplingar och en metod för tillverkning därav
摘要 <p>A substrate-through electrical connection (10) for connecting components on opposite sides of a substrate, and a method for making same. The connection includes a substrate-through via made from substrate material (10'). There is a trench (11) provided surrounding the via, the walls of the trench being coated with a layer of insulating material (12) and the trench (11) is filled with conductive or semi-conductive material (13). A doping region (15) for threshold voltage adjustment is provided in the via material in the surface of the inner trench wall between insulating material (12) and the material (10') in the via. There are contacts (17', 17'') to the via on opposite sides of the substrate, and a contact (18) to the conductive material (13) in the trench (11) so as to enable the application of a voltage to the conductive material (13).</p>
申请公布号 SE536530(C2) 申请公布日期 2014.02.04
申请号 SE20110050356 申请日期 2011.04.21
申请人 SILEX MICROSYSTEMS AB 发明人 ULF ERLESAND
分类号 H01L21/768;H01L23/498;H01L27/12;H01L29/78 主分类号 H01L21/768
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