| 摘要 |
According to one embodiment, a semiconductor memory device includes a plurality of memory cell arrays each includes a plurality of memory cells, the plurality of memory cell arrays being stacked on a semiconductor substrate to form a three-dimensional structure, and a data input/output circuit includes a first address buffer and a second address buffer configured to store a first address and a second address of the plurality of memory cells, and a controller configured to perform control to time-divisionally output the first address and the second address to a first address bus and a second address bus in data input/output. |
