发明名称 |
METHOD OF MANUFACTURING DEVICE HAVING A BLOCKING STRUCTURE |
摘要 |
A method of manufacturing a semiconductor device, and the method includes forming a stack of a work function layer, a blocking structure, and a metal cap layer sequentially on a substrate. The forming of the blocking structure includes sequentially depositing at least a metal diffusion prevention layer over the work function layer and an electrical performance enhancement layer over the metal diffusion prevention layer before forming the metal cap layer. The electrical performance enhancement layer includes a TiN layer having a Ti/N ratio greater than 1. |
申请公布号 |
US2014024207(A1) |
申请公布日期 |
2014.01.23 |
申请号 |
US201314033904 |
申请日期 |
2013.09.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHAN BOR-WEN;TSAU HSUEH WEN |
分类号 |
H01L29/40 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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