| 摘要 |
<p>The present invention relates to a resistive random access memory and, particularly, to technology about a resistive random access memory device using a resistive switch device. The present invention reduces sensing time by including a first amplifier which amplifies a sensing current corresponding to data sensed in the memory cell and a second amplifier which stores the sensing current amplified by the first amplifier and amplifies a charge when the amplified sensing current is stored.</p> |
