| 摘要 |
A light emitting device according to one embodiment of the present invention includes: a substrate; a light emitting structure which is located on the substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode which is located on the first conductive semiconductor layer in which at least a part of the second conductive semiconductor layer and the active layer is exposed by being selectively etched; a second electrode which is located on the second conductive semiconductor layer; and a first superlattice layer which is located on the first conductive semiconductor layer. The first conductive semiconductor layer includes a first conductive contact layer with an exposure surface on which the first electrode is located. The first superlattice layer is located between the first conductive contact layer and the active layer. |
