DIODE AND POWER CONVERSION DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a diode capable of obtaining high recovery breakdown resistance due to a simple structure, and a power conversion device using the same.SOLUTION: A semiconductor substrate 1 in a diode comprises: an anode p layer AP in contact with a principal surface 10 of an anode side; an n-drift layer NM adjacent to the anode p layer AP; a cathode n layer in contact with a principal surface 20 of a cathode side and having a higher impurity concentration than the n-drift layer NM; and a termination p layer TP in contact with the principal surface of the cathode side.