发明名称 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
摘要 <p>Provided is a stacked structure of semiconductor chips. The stacked structure comprises: semiconductor chips stacked in one direction; and a wiring member connecting the semiconductor chips electrically. Each semiconductor chip includes: bonding pads which are formed on a first surface; a protective layer which is formed on the first surface and in which the bonding pads are exposed; a side insulating layer which is formed on the first surface and a lateral side connecting a second surface facing the first surface; and a first bonding layer which is formed on the protective layer and the side insulating layer, and in which the bonding pads, a part of the protective layer lying in a direction from the bonding pads toward the side insulating layer, and a part of the side insulating layer are exposed. The wiring member electrically connects the semiconductor chips by being formed on the exposed bonding pads, a part of the exposed protective layer, a part of the exposed side insulating layer, and the side insulating layer in one direction.</p>
申请公布号 KR20140006589(A) 申请公布日期 2014.01.16
申请号 KR20120073960 申请日期 2012.07.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SEOK HYUN;PARK, JIN WOO;PARK, TAE SUNG
分类号 H01L23/48;H01L23/12 主分类号 H01L23/48
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