发明名称 |
Integrated circuit on SOI comprising a thyristor (SCR) protecting against electrostatic discharges |
摘要 |
<p>The circuit (9) has a set of electronic components (1, 2) such as fully-depleted silicon-on-insulator FETs, and a buried insulating layer (92) of ultra-thin buried oxide layer type, that is placed under the set of electronic components. An electrode is connected to a voltage level (E1), and another electrode is connected to another voltage level (E2). An isolation trench (62) separates the former electrode and a third electrode. Another isolation trench (13) isolates the former electrode and falls short of an interface between a ground plane and a semi-conducting well (12).</p> |
申请公布号 |
EP2685500(A1) |
申请公布日期 |
2014.01.15 |
申请号 |
EP20130175435 |
申请日期 |
2013.07.05 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;STMICROELECTRONICS SA |
发明人 |
FENOUILLET-BERANGER, CLAIRE;FONTENEAU, PASCAL |
分类号 |
H01L27/12;H01L27/02;H01L27/06 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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