| 摘要 |
An oxide semiconductor film, a gate insulating film, a gate electrode layer, and a nitride silicon film are sequentially arranged on a transistor of a top gate structure of the present invention. The transistor of the top gate structure has a channel formation area in the oxide semiconductor film. Nitrogen is added to a partial area of the oxide semiconductor film and the partial area became a low resistance area because the present invention has the nitride silicon film which in contact with the oxide semiconductor film on the oxide semiconductor film. Source and drain electrode layers are in contacts with the low resistance area of the oxide semiconductor film. An area which is not in contact with the nitride silicon film among the oxide semiconductor films (In other words, an area which is overlapped with the gate insulating film and the gate electrode layer) becomes the channel formation area. |
