METHOD FOR MANUFACTURING N-TYPE SILICON SINGLE CRYSTAL, AND PHOSPHORUS-DOPED N-TYPE SILICON SINGLE CRYSTAL

摘要

The present invention is directed to a method for producing an N-type silicon single crystal by the FZ method, wherein the N-type silicon single crystal is produced by performing doping by using Ar-based PH 3 gas and Ar-based B 2 H 6 gas as doping gas. As a result, an N-type silicon single crystal production method and an N-type silicon single crystal, the method that can prevent the generation of OSFs even when a silicon single crystal, in particular, a silicon single crystal with a diameter of 8 inches (200 mm) or more is produced by the FZ method, are provided.