发明名称 COMPOUND FOR FORMING ORGANIC FILM, ORGANIC FILM MATERIAL USING THE SAME, METHOD FOR FORMING ORGANIC FILM AND PATTERNING PROCESS
摘要 The purpose of the present invention is to provide an organic film material for forming an organic layer which has high dry etching resistance while exhibiting high gap-filling properties or planarization properties. The purpose of the present invention is accomplished by a compound for forming an organic film having a partial structure represented by a general formula (i) or a general formula (ii). (In the general formula, ring structure Ar1, Ar2, and Ar3 represent a substituted or non-substituted benzene ring or naphthalene ring. e is 0 or 1. R0 is a hydrogen atom or a linear, branched or cyclic monovalent organic group of C1-C30. And L0 is a linear, branched or cyclic divalent organic group of C1-C32. Wherein, a methylene group composing the L0 can be substituted with an oxygen atom or a carbonyl group.)
申请公布号 KR20130142079(A) 申请公布日期 2013.12.27
申请号 KR20130068812 申请日期 2013.06.17
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 TACHIBANA SEIICHIRO;KORI DAISUKE;OGIHARA TSUTOMU;WATANABE TAKERU;NODA KAZUMI;YANO TOSHIHARU
分类号 C07C43/164;C07C35/38;G03F7/004 主分类号 C07C43/164
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