发明名称 |
COMPOUND FOR FORMING ORGANIC FILM, ORGANIC FILM MATERIAL USING THE SAME, METHOD FOR FORMING ORGANIC FILM AND PATTERNING PROCESS |
摘要 |
The purpose of the present invention is to provide an organic film material for forming an organic layer which has high dry etching resistance while exhibiting high gap-filling properties or planarization properties. The purpose of the present invention is accomplished by a compound for forming an organic film having a partial structure represented by a general formula (i) or a general formula (ii). (In the general formula, ring structure Ar1, Ar2, and Ar3 represent a substituted or non-substituted benzene ring or naphthalene ring. e is 0 or 1. R0 is a hydrogen atom or a linear, branched or cyclic monovalent organic group of C1-C30. And L0 is a linear, branched or cyclic divalent organic group of C1-C32. Wherein, a methylene group composing the L0 can be substituted with an oxygen atom or a carbonyl group.) |
申请公布号 |
KR20130142079(A) |
申请公布日期 |
2013.12.27 |
申请号 |
KR20130068812 |
申请日期 |
2013.06.17 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
TACHIBANA SEIICHIRO;KORI DAISUKE;OGIHARA TSUTOMU;WATANABE TAKERU;NODA KAZUMI;YANO TOSHIHARU |
分类号 |
C07C43/164;C07C35/38;G03F7/004 |
主分类号 |
C07C43/164 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|