| 摘要 |
<p>A semiconductor substrate (400) having a surface (SF) is prepared. On a region including the surface (SF) of the semiconductor substrate (400), a conductive film is formed. The process for forming the conductive film includes the following steps. When the conductive film is partially formed, characteristics relating to either alternating-current loss and/or alternating-current conductance of the partially formed conductive film are measured. On the basis of these characteristics, film forming conditions for forming the conductive film are adjusted. Thereby, film surface roughness during the film formation can be fed back to the film forming conditions.</p> |
