Manufacturing method for semiconductor device

摘要

A manufacturing method for a semiconductor device of the present invention includes: preparing a semiconductor wafer including an electrode formed therein; electrically connecting a first semiconductor element formed in a semiconductor chip and the electrode formed in the semiconductor wafer; filling a gap between the semiconductor wafer and the semiconductor chip with a first insulating resin layer; forming a second insulating resin layer on the semiconductor wafer; grinding the second insulating resin layer and the semiconductor chip until a thickness of the semiconductor chip reaches a predetermined thickness; forming a first insulating layer on the second insulating resin layer and the semiconductor chip; forming a line on the first insulating layer connected with a conductive material filled an opening in the first insulating layer and the second insulating resin layer to expose the electrode; and grinding the semiconductor wafer until a thickness of the semiconductor wafer reaches a predetermined thickness.

主权项

1. A manufacturing method for a semiconductor device, comprising:
preparing a semiconductor wafer including an electrode formed therein, and electrically connecting a first semiconductor element formed in a semiconductor chip and the electrode formed in the semiconductor wafer to each other via a bump; before or after connecting the semiconductor wafer and the semiconductor chip to each other, filling a gap between the semiconductor wafer and the semiconductor chip, facing each other, with a first insulating resin layer; forming a second insulating resin layer on the semiconductor wafer to have a thickness sufficient to embed the semiconductor chip; grinding the second insulating resin layer and the semiconductor chip until a thickness of the semiconductor chip reaches a predetermined thickness; forming a first insulating layer on the second insulating resin layer and the semiconductor chip, and forming an opening in the first insulating layer and the second insulating resin layer to expose the electrode; filling the opening with a conductive material; forming a line on the first insulating layer, the line being connected with the conductive material filling the opening; forming a first terminal electrically connected with the line; and grinding the semiconductor wafer until a thickness of the semiconductor wafer reaches a predetermined thickness.