发明名称 |
METHOD FOR PRODUCING RESIST PATTERN |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a resist composition that can give a resist pattern with a superior focus margin (DOF).SOLUTION: A method for producing a resist pattern includes steps of: (1) applying a following resist composition on a substrate; (2) drying the applied resist composition to form a composition layer; (3) exposing the composition layer; (4) heating the exposed composition layer; and (5) developing the heated composition layer with a negative developing solution. The resist composition comprises: a resin (A1) that has an acid-labile group and is decomposed by an action of an acid to decrease the solubility with a negative developing solution; a resin (A2) that has a fluorine atom and is soluble with a negative developing solution; a compound expressed by formula (I); an acid generator; and a solvent. In the formula, Rand Reach independently represent a hydrocarbon group having 1 to 12 carbon atoms; and m' and n' each independently represent an integer of 0 to 4. |
申请公布号 |
JP2013254188(A) |
申请公布日期 |
2013.12.19 |
申请号 |
JP20130001599 |
申请日期 |
2013.01.09 |
申请人 |
SUMITOMO CHEMICAL CO LTD |
发明人 |
ICHIKAWA KOJI;YASUE TAKAHIRO;YAMAMOTO SATOSHI |
分类号 |
G03F7/038;C08F20/10;G03F7/004;G03F7/039;G03F7/32;H01L21/027 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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