| 摘要 |
A memory device includes: (1) multiple magnetic random access memory ("MRAM") cells each including a first end and a second end; (2) a bit line electrically coupled to the first end of at least one of the MRAM cells; and (3) a strap electrically coupled to the second end of each one of the MRAM cells. During a write operation, the bit line is configured to apply a first heating current, and the strap is configured to apply a second heating current, such that at least one of the MRAM cells is heated to at least a threshold temperature according to the first heating current and the second heating current. |
