| 摘要 |
The present invention relates to a thin film depositing apparatus. The thin film depositing apparatus according to the present invention includes a chamber, a substrate moving unit which moves a plurality of substrates on a preset closed path including a pair of linear paths and a pair of curved paths in the chamber, a first gas supply unit which is formed on the linear path and supplies at least one among one or more kinds of processing gases and purge gases, a second gas supply unit which is formed on the curved path and supplies at least one among one or more kinds of processing gases and purge gases, and a substrate input and output unit which inputs and outputs the substrate to and from the chamber. |
