LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention relates to a light emitting device and a method for manufacturing the same. A first semiconductor layer, an active layer, and a second semiconductor layer are piled up on a substrate. The active layer is formed by piling up quantum wall layers and barrier layers. The impurity doping gap between the second semiconductor layer and the uppermost barrier layer is 2.0E19 to 1.5E20.