发明名称 |
Semiconductor device structures with modulated doping and related methods |
摘要 |
A semiconductor device may include a doped semiconductor region having a modulated dopant concentration. The doped semiconductor region may be a silicon doped Group III nitride semiconductor region with a dopant concentration of silicon being modulated in the Group III nitride semiconductor region. In addition, a semiconductor active region may be configured to generate light responsive to an electrical signal therethrough. Related methods, devices, and structures are also discussed. |
申请公布号 |
US8604461(B2) |
申请公布日期 |
2013.12.10 |
申请号 |
US20090639493 |
申请日期 |
2009.12.16 |
申请人 |
DRISCOLL DANIEL CARLETON;CHAVAN ASHONITA;SAXLER ADAM WILLIAM;CREE, INC. |
发明人 |
DRISCOLL DANIEL CARLETON;CHAVAN ASHONITA;SAXLER ADAM WILLIAM |
分类号 |
H01L29/15 |
主分类号 |
H01L29/15 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|