| 摘要 |
<p>A semiconductor device, provided with: a first-conductivity-type drift layer (13); a second-conductivity-type base layer (14) formed on the surface layer part of the drift layer; a second-conductivity-type collector layer (11) formed at a location on the drift layer at a distance from the base layer; a plurality of gate insulation films (16) formed on the surface of the base layer; a plurality of gate electrodes (17a, 17b) formed on each of the gate insulation films; an emitter layer (20) formed on the surface layer part of the base layer; an emitter electrode (23) electrically connected to the emitter layer and the base layer; and a collector electrode (24) electrically connected to the collector layer. The speed of change in the gate voltage in a portion of the gate electrodes (17a), which constitute some of the plurality of gate electrodes, is lower than the speed of change in the gate voltage in the remaining gate electrodes (17b). The emitter layer is in contact only with those gate insulation films where the portion of the gate electrodes is disposed.</p> |
