发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method capable of highly efficiently hardening an adhesive by minimizing thermal damage of a circumferential member due to heat expansion when hardening the adhesive by heating in manufacturing a semiconductor device in which a silicon chip is bonded onto a base material via the adhesive.SOLUTION: A method for manufacturing a semiconductor device mounts a silicon chip 30 on a base material 10 via an adhesive 20, transmits a laser beam L having an infrared wavelength through the silicon chip 30 by irradiating the laser beam L from above the silicon chip 30, and hardens the adhesive 20 by heating it directly with the transmitted laser beam L.
申请公布号 JP2013239560(A) 申请公布日期 2013.11.28
申请号 JP20120111339 申请日期 2012.05.15
申请人 DENSO CORP 发明人 HASHIMOTO HIROSHI;SAITO TAKASHIGE
分类号 H01L21/52 主分类号 H01L21/52
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