发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE MANUFACTURING METHOD AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To provide a technique for performing higher-accuracy electrical testing.SOLUTION: A semiconductor integrated circuit device manufacturing method includes a step of executing an electrical test of a semiconductor integrated circuit device (3) that includes: a first resistor (Rt) which is provided between a first terminal (GND) and a third terminal (DP/DM); and a current source (Iu) which is provided between a second terminal (VCC_USB) and the third terminal and can switch between the supply of current and the stop of current supply. This step includes a step of calculating a resistance value of the first resistor on the basis of: measurement values of a first current (It), which flows through a signal test pin of a test socket when a first voltage (Vp) is applied to the test pin with the supply of current from the current source stopped, and the first voltage; a measurement value (Ix) of current that is supplied from the current source; and a measurement value (Voh) of voltage of the signal test pin in a state where current is supplied from the current source to the third terminal and an external resistor (Rs) is connected between the signal test pin and a ground test pin.
申请公布号 JP2013234920(A) 申请公布日期 2013.11.21
申请号 JP20120107627 申请日期 2012.05.09
申请人 RENESAS ELECTRONICS CORP 发明人 KITAHARA NAOYUKI;MATSUISHI TSUGUMI
分类号 G01R31/28 主分类号 G01R31/28
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