| 摘要 |
The invention relates to a CVD reactor, with a process chamber (4) which is arranged therein and into which a process gas can be fed by means of a gas inlet member (2), with a substrate holder (3) which, on the upper side (3') thereof facing the process chamber (4), has one or more pockets (5) which are designed in such a manner that one substrate (7) in each case rests only on selected, raised support regions (6), and with a heating system (9) which is arranged below the substrate holder (3) and is spaced apart from the lower side (3") of the substrate holder (3), wherein the lower side (3") of the substrate holder (3) is configured differently in a central region (b) with respect to the heat transmission from the heating system (9) to the substrate holder (3), which central region is located under a central zone of the pocket (5), than in a surrounding region (a) which surrounds the central region (a) and is located below a zone close to the edge of the pocket (5). The heating system (9) is intended to be designed as a substantially planar heat source. A gas flushing device (11) is provided in order to flush the gap (12) with flushing gases of different heat conductivity. The gap (12) has such a gap height (s, t), that, upon a change of a first flushing gas with a first heat conductivity to a second flushing gas with a second heat conductivity, the supply of heat from the heating system (9) to the substrate holder (3) changes differently in the circumferential region (a) than in the central region (b). |
